Inorganic oxide core, polymer shell nanocomposite as a high K gate dielectric for flexible electronics applications

被引:203
作者
Maliakal, A [1 ]
Katz, H
Cotts, PM
Subramoney, S
Mirau, P
机构
[1] Lucent Technol, Dept Mat Res, Bell Labs, Murray Hill, NJ 07974 USA
[2] DuPont Co Inc, Cent Res, Wilmington, DE 19880 USA
[3] USAF, Res Labs, Wright Patterson AFB, OH 45433 USA
关键词
D O I
10.1021/ja052035a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic/inorganic core shell nanoparticles have been synthesized using high K TiO2 as the core nanoparticle, and polystyrene as the shell. This material is easy to process and forms transparent continuous thin films, which exhibit a dielectric constant enhancement of over 3 times that of bulk polystyrene. This new dielectric material has been incorporated into capacitors and thin film transistors (TFTs). Mobilities approaching 0.2 cm(2)/V (.) s have been measured for pentacene TFTs incorporating the new TiO2 polystyrene nanostructured gate dielectric, indicating good surface properties for pentacene film growth. This novel strategy for generating high K flexible gate dielectrics will be of value in improving organic and flexible electronic device performance.
引用
收藏
页码:14655 / 14662
页数:8
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