A silicon bipolar technology for high-efficiency power applications up to C-band

被引：11

作者：

Biondi, T ^{[1
]}

Carrara, F ^{[1
]}

Scuderi, A ^{[1
]}

Palmisano, G ^{[1
]}

机构：

[1] Univ Catania, Fac Ingn, DIEES, I-95125 Catania, Italy

来源：

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年

关键词：

D O I：

10.1109/RFIC.2003.1213915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the large-signal characterization and modeling of a 0.8-mum 46-GHz-f(r) silicon bipolar technology for RF power applications up to C-band. A series of devices with optimized layout and vertical structure was fabricated for on-wafer load-pull testing at 1.9 GHz, 2.4 GHz, and 5.2 GHz. Under continuous-wave operation, a 56% power-added efficiency and 11-dB large-signal gain were achieved at a 22-dBm output power level by an 80-mum emitter length device (180-mum(2) emitter area) operating at 5.2 GHz with a 2.7-V supply voltage. A modified Gummel-Poon model was extracted from DC and multibias S-parameter measurements and validated by comparisons with load-pull results. Close agreement was found between simulated and measured large-signal performance up to power levels well above the 1-dB compression point.

引用

页码：155 / 158

页数：4

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