Voltage dependence of cluster size in carbon films using plasma immersion ion implantation

被引:7
作者
McKenzie, DR [1 ]
Tarrant, RN
Bilek, MMM
Pearce, G
Marks, NA
McCulloch, DG
Lim, SHN
机构
[1] Univ Sydney, Sch Phys, Dept Appl Phys, Sydney, NSW 2006, Australia
[2] RMIT Univ, Dept Appl Phys, Melbourne, Vic 3001, Australia
关键词
plasma immersion ion implantation; Raman spectroscopy; carbon; cathodic arc; cluster size;
D O I
10.1016/S0168-583X(03)00831-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Carbon films were prepared using a cathodic arc with plasma immersion ion implantation (Pill). Using Raman spectroscopy to determine cluster size, a comparison is made between cluster sizes at high voltage and a low duty cycle of pulses with the cluster sizes produced at low voltage and a higher duty cycle. We find that for ion implantation in the range 2-20 kV, the cluster size depends more on implantation energy (E) than implantation frequency (f), unlike stress relief, which we have previously shown [M.M.M. Bilek, et al., IEEE Trans. in Plasma Sci., Proceedings 20th ISDEIV 1-5 July 2002, Tours, France, Cat. No. 02CH37331, IEEE, Piscataway, NJ, USA, p. 95] to be dependent on the product Ef. These differences are interpreted in terms of a model in which the ion impacts create thermal spikes. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码:741 / 744
页数:4
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