Dissociative photoionization of SiF4 around the Si 2p edge:: a new TOFMS study with improved mass resolution

被引：24

作者：

Santos, ACF ^{[1
]}

Lucas, CA ^{[1
]}

de Souza, GGB ^{[1
]}

机构：

[1] Univ Fed Rio de Janeiro, Inst Quim, BR-21949900 Rio De Janeiro, Brazil

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2001年 / 114卷

关键词：

PEPICO; TOFMS; photoionization; SiF4;

D O I：

10.1016/S0368-2048(00)00311-X

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Mass spectra, with improved mass resolution, have been obtained for the SiF4 molecule, using time-of-flight mass spectrometry and synchrotron radiation, below and above the Si 2p ionization edge (L-III, 111.7 eV). New branching ratios for the ionic dissociation have been determined and compared to previous results. The excellent signal-to-noise ratio has also allowed for the first observation of a rearrangement fragment (F-2(+)) in photoionization studies of the SiF4 molecule. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：115 / 121

页数：7

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