Nanoscale photocurrent variations at metal-modified semiconductor surfaces

被引:26
作者
Hiesgen, R [1 ]
Meissner, D [1 ]
机构
[1] Forschungszentrum Julich, Inst Energieverfahrenstech, D-52425 Julich, Germany
关键词
D O I
10.1021/jp9816420
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The photocurrents measured by a scanning tunneling microscope have been used to analyze the electronic properties of nanoscale-modified WSe(2) semiconductor surfaces. On uncovered crystals in ambient air, space charges along steps can be analyzed. On copper-modified semiconductor surfaces, the space charge zones around pulse-deposited metal particles and their dependence on the size of the metal particle can be determined and provide a first direct proof of size-dependent barrier heights of nanosized Schottky contacts. Also, the time evolution of the electronic properties of a metal-modified WSe(2) surface under corrosion conditions was followed by photocurrent measurements. By combination of photocurrent measurements and local current/voltage curves, the influence of recombination and of charges on the photocurrent can be separated.
引用
收藏
页码:6549 / 6557
页数:9
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