Fluence dependence of femtosecond-laser-induced nanostructure formed on TiN and CrN

被引:77
作者
Yasumaru, N [1 ]
Miyazaki, K
Kiuchi, J
机构
[1] Fukui Natl Coll Technol Sabae, Dept Mech Engn, Fukui 9168507, Japan
[2] Kyoto Univ, Inst Adv Energy, Kyoto 6110011, Japan
[3] Eyetec Co Ltd, Fukui 9160016, Japan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 05期
关键词
D O I
10.1007/s00339-005-3218-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The fluence dependence of the nanostructure formation, which has been observed in our recent experiments on femtosecond (fs)-laser ablation, was examined in detail for hard thin films of TiN and CrN. The size D of the periodic fine structure formed with fs-laser pulses can be divided into two regions that depend on the laser fluence F, i.e. the region I where D increases rapidly with increasing F near the ablation threshold, and the region II where D increases slowly with an increase in F and almost saturates. The nanostructure has been observed only in the region I with a narrow width of F. The region II produces a periodic ripple structure whose size is 1/2-4/5 of the wavelength used. The effects of the thermal process and material composition on the nanostructure formation are discussed.
引用
收藏
页码:933 / 937
页数:5
相关论文
共 12 条
[1]  
BAUERLE D, 1996, LASER PROCESSING CHE, pCH28
[2]   Femtosecond pulse laser processing of TiN on silicon [J].
Bonse, J ;
Rudolph, P ;
Krüger, J ;
Baudach, S ;
Kautek, W .
APPLIED SURFACE SCIENCE, 2000, 154 (154) :659-663
[3]   Femtosecond laser ablation of silicon-modification thresholds and morphology [J].
Bonse, J ;
Baudach, S ;
Krüger, J ;
Kautek, W ;
Lenzner, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (01) :19-25
[4]   Chemical, morphological and accumulation phenomena in ultrashort-pulse laser ablation of TiN in air [J].
Bonse, J ;
Sturm, H ;
Schmidt, D ;
Kautek, W .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (06) :657-665
[5]   The precision of the femtosecond-pulse laser ablation of TiN films on silicon [J].
Bonse, J ;
Geuss, M ;
Baudach, S ;
Sturm, H ;
Kautek, W .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1) :S399-S402
[6]  
Chichkov BN, 1996, APPL PHYS A-MATER, V63, P109, DOI 10.1007/BF01567637
[7]   Reflectivity in femtosecond-laser-induced structural changes of diamond-like carbon film [J].
Miyazaki, K ;
Maekawa, N ;
Kobayashi, W ;
Kaku, M ;
Yasumaru, N ;
Kiuchi, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (01) :17-21
[8]  
Oishi M., 1990, J SURF FINISH SOC JP, V41, P1125
[9]   Ripples revisited: non-classical morphology at the bottom of femtosecond laser ablation craters in transparent dielectrics [J].
Reif, J ;
Costache, F ;
Henyk, M ;
Pandelov, SV .
APPLIED SURFACE SCIENCE, 2002, 197 :891-895
[10]   Glassy carbon layer formed in diamond-like carbon films with femtosecond laser pulses [J].
Yasumaru, N ;
Miyazaki, K ;
Kiuchi, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (03) :425-427