Initial oxidation of Si(100)-(2x1) as an autocatalytic reaction

被引：55

作者：

Suemitsu, M

Enta, Y

Miyanishi, Y

Miyamoto, N

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 980, Japan

[2] Tohoku Gakuin Univ, Fac Engn, Tagajo, Miyagi 985, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.82.2334

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time evolutions of O 2p intensity from real-time ultraviolet photoelectron spectroscopy were obtained for the initial oxidation of Si(100)-(2 X 1) surfaces at oxygen pressures P = 7.5 x 10(-8)- 2.8 X 10(-6) Torr and temperatures T = RT - 720 degrees C. Despite the separation of the growth mode into the Langmuir-Hinshelwood mode in the low-T-high-P region and the 2D-island growth in the high-T-low-P region, they were unifiedly described by a single rate equation for the oxide coverage theta, which assumes two types of surface oxygen monomers and the number density of oxide islands that scales with theta(1 - theta)(2).

引用

页码：2334 / 2337

页数：4

共 14 条

[1]

ATKINS PW, 1990, PHYSICAL CHEM

[2] MECHANISM OF SUBMONOLAYER OXIDE FORMATION ON SILICON SURFACES UPON THERMAL-OXIDATION [J].