HF etchant solutions in supercritical carbon dioxide for "Dry" etch processing of microelectronic devices

被引：19

作者：

Jones, CA

Yang, DX

Irene, EA

Gross, SM

Wagner, M

DeYoung, J ^{[1
]}

DeSimone, JM

机构：

[1] Micell Technol, Raleigh, NC 27617 USA

[2] Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA

[3] N Carolina State Univ, Dept Chem Engn, Raleigh, NC 27695 USA

来源：

CHEMISTRY OF MATERIALS | 2003年 / 15卷 / 15期

关键词：

D O I：

10.1021/cm034235w

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures."

引用

页码：2867 / 2869

页数：3

共 30 条

[1]

ALLEN RD, 1997, Patent No. 5665527

[2] Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication [J].