Transport properties of two quantum dots connected in series formed in silicon inversion layers

被引：6

作者：

Matsuoka, H

Ahmed, W

机构：

[1] Univ of Cambridge, Cambridge, United Kingdom

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 4A期

关键词：

Coulomb blockade; two quantum dots; silicon inversion layer; inter-dot interaction; co-tunneling; splitting of peaks;

D O I：

10.1143/JJAP.35.L418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the transport properties over a range of temperatures of two quantum dots connected in series formed in silicon inversion layers. The inter-dot interaction as well as the electron number can be changed by means of the field effect in our device. For weak inter-dot interactions, the device shows a periodic current oscillation and a biquadratic temperature-dependent current due to co-tunneling. On increasing the inter-dot interaction, we have observed splitting of peaks and estimated the typical inter-dot capacitance to be 1.3 x 10(-18) F.

引用

收藏

页码：L418 / L420

页数：3

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