'3-Dimensional' TEM silicon-device analysis by combining plan-view and FIB sample preparation

被引：9

作者：

De Veirman, AEM ^{[1
]}

机构：

[1] Philips Semicond Nijmegen, NL-6534 AE Nijmegen, Netherlands

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 102卷 / 1-3期

关键词：

transmission electron microscopy; focused ion beam technique; specimen preparation techniques; crystal defects; IC processing;

D O I：

10.1016/S0921-5107(02)00629-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cross-sectional transmission electron microscopy (TEM) analysis has become routinely used in semiconductor industry to support failure and yield analysis. Plan-view transmission electron microscopy analysis however is much less frequently performed. In this paper it is illustrated that plan-view transmission electron microscopy analysis can add valuable information in yield analysis studies, especially when crystal defects are involved. '3-Dimensional' information can be obtained by combining cross-sectional transmission electron microscopy analysis with plan-view analysis. If the available material is limited, it can become a difficult choice whether to go for a cross-sectional or a plan-view analysis. Therefore it was explored if a cross-sectional specimen could still be made out of a plan-view specimen, using the plan-view analysis to locate the failure site precisely. This has recently been successfully done using the in-situ lift-out technique in the focused ion beam machine. (C) 2003 Published by Elsevier B.V.

引用

页码：63 / 69

页数：7

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