Electrochemical fabrication of a memory device based on conducting polymer nanocomposites

被引：31

作者：

Chen, Qi

Zhao, Lu

Li, Chun

Shi, Gaoquan ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Key Lab Bioorgan Phosphorous Chem & Chem Biol, Beijing 100084, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 49期

关键词：

D O I：

10.1021/jp075988z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Memory devices with sandwiched structures were fabricated by electrochemical deposition of the active layers onto indium tin oxide substrates. The active layers with thicknesses of 240-280 nm were composed of poly-(3-hexylthiohene) and gold nanoparticles (GNPs), in which the GNP content was around 9 wt %. The devices exhibited an on/off conductivity ratio of 10(4) and can be read for over 10(4) times without a distinct performance decrease even after being stored in air without packing for over 1 month.

引用

页码：18392 / 18396

页数：5

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