High-resolution transmission electron microscopy study of luminescent anodized amorphous silicon

被引：11

作者：

Bustarret, E ^{[1
]}

Sauvain, E ^{[1
]}

Ligeon, M ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHER,FRANCE

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1997年 / 75卷 / 01期

关键词：

D O I：

10.1080/095008397179895

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High resolution transmission electron microscopy revealed luminescent anodized hydrogenated silicon to be porous on a 3-5 nm scale and still fully amorphous, in contrast with the nanocrystalline character of anodized c-Si wafers processed and observed under similar conditions. These experimental findings strengthened our claim that crystallinity is not a requirement for visible photoluminescence to occur at room-temperature in silicon-based nanostructures.

引用

页码：35 / 42

页数：8

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