Ambipolar field-effect transistors based on solution-processable blends of thieno[2,3-b]thiophene terthiophene polymer and methanofullerenes

被引：79

作者：

Shkunov, M ^{[1
]}

Simms, R ^{[1
]}

Heeney, M ^{[1
]}

Tierney, S ^{[1
]}

McCulloch, I ^{[1
]}

机构：

[1] Merck Chem, Southampton SO16 7QD, Hants, England

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 21期

关键词：

D O I：

10.1002/adma.200500890

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin-film field-effect transistors showing n- and p-type conduction under different bias conditions are produced from solution-processable ambipolar blends of thieno[2,3-b]thiophene terthiophene polymer and phenyl C-61 butyric acid methyl ester (see Figure). Balanced charge transport in this blend is achieved by treating the insulator interface with alkyl-chain silanes. Complementary-like inverters have been fabricated on a single substrate, showing a maximum gain of 65.

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页码：2608 / +

页数：6

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