Highly-reliable ultra thin gate oxide formation process

被引：7

作者：

Iwamoto, T

Morita, M

Ohmi, T

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.554089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated that carbon contamination on a gate oxide surface induces the degradation of the gate oxide reliability. Highly-reliable ultra thin gate oxides can be obtained by a new oxide formation process : the thermal oxidation of a silicon surface in the strongly reductive ambient and/or the removal of hydro-carbon from the gate oxide surface with O3 gas/IR lamp cleaning.

引用

页码：751 / 754

页数：4