Next-generation HgCdTe infrared detectors and detector arrays require the growth of multilayer heterojunction structures with precisely controlled alloy composition and doping levels and minimal defect densities. Molecular beam epitaxy (MBE) provides the ability to produce such structures. However, in the absence of a real-time, in situ, control methodology the extreme sensitivity of BgCdTe layer quality and doping efficiency on fundamental MBE variable such a substrate temperature and effusion cell flux provide serious challenges to the uniform and reproducible growth of such structures. In this paper, we describe an integrated, multi-sensor approach for monitoring and controlling the variables that are most important for MBE growth of HgCdTe device structures used in advanced multi-color infrared detectors and high speed, low-noise avalanche photodiodes. Substrate temperature, effusion cell flux, and layer composition are monitored using absorption-edge spectroscopy (ABES), optical flux monitoring (OFM), an spectroscopic ellipsometry (SE), respectively. Flexible, custom software has been developed and implemented for analysis of sensor inputs and feedback control of the MBE system in response to those inputs. The sensors and their application to growth of HgCdTe will be described, and the use of a custom software framework for data analysis and system control will be discussed.
