Resonant Andreev reflections in superconductor-carbon-nanotube devices

被引:39
作者
Wei, YD
Wang, J
Guo, H
Mehrez, H
Roland, C
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[3] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada
[4] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 19期
关键词
D O I
10.1103/PhysRevB.63.195412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resonant Andreev reflection through superconductor-carbon-nanotube devices was investigated theoretically with a focus on the superconducting proximity effect. Consistent with a recent experiment, we find that for on-resonance high-transparency devices, the Andreev current is characterized by a large value and a resistance dip; low-transparency off-resonance devices give the opposite result. We also give evidence that the observed low-temperature transport anomaly may be a natural result of the Andreev reflection process.
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页数:5
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