Surface-layer band gap widening in Cu(In,Ga)Se2 thin films

被引：36

作者：

Romero, MJ ^{[1
]}

Jones, KM ^{[1
]}

AbuShama, J ^{[1
]}

Yan, Y ^{[1
]}

Al-Jassim, MM ^{[1
]}

Noufi, R ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1631396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy observations, cathodoluminescence spectroscopy and spectrum imaging are combined to investigate the emission spectrum in Cu(In,Ga)Se-2 (CIGS) thin films with improved spatial resolution. We report direct evidence for a surface layer of wider band gap, which forms spontaneously in CIGS films. The existence of such a surface layer is critical for attaining high efficiency in solar cells based on these chalcopyrite semiconductor compounds. (C) 2003 American Institute of Physics.

引用

页码：4731 / 4733

页数：3

共 16 条

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