Correlation between dislocations and luminescence in GaN

被引：3

作者：

Hao, M ^{[1
]}

Sugahara, T ^{[1
]}

Tottori, S ^{[1
]}

Nozaki, M ^{[1
]}

Kurai, S ^{[1
]}

Nishino, K ^{[1
]}

Naoi, Y ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Univ Tokushima, Satellite Venture Business Lab, Nitride Photon Semicond Lab, Tokushima 7708506, Japan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

GaN film; bulk GaN; dislocation; non-radiative recombination center; yellow luminescence; segregation of point defects;

D O I：

10.1117/12.311002

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A GaN film grown on sapphire substrate by metalorganic chemical vapor deposition have been investigated by the plan-view TEM and CL. Direct evidence of dislocation being a non-radiative recombination center, have been provided. A bulk GaN grown by the sublimation method and a homoepitaxial GaN grown by hydride vapor phase epitaxy have also been investigated by TEM, the ii-ray diffraction and FL. The results confirme that it is not the dislocations but the point defects that are responsible for the yellow luminescence of the grown GaN. It was found, in a cross-section TEM image of a GaN/Al2O3 film, that there are many precipitates gathered around a mixed dislocation. The precipitates might be formed by the segregation of point defects around dislocations. Since most of the point defects in GaN seems to segregate around the dislocations, dislocations can reduce the local concentration of the point defects in the no dislocation region. In this case, the optical property of GaN might be improved by the existence of the dislocation.

引用

页码：138 / 145

页数：8