ALD of high-κ dielectrics on suspended functionalized SWNTs

被引:61
作者
Farmer, DB [1 ]
Gordon, RG
机构
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
关键词
D O I
10.1149/1.1862474
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Conformal atomic layer deposition (ALD) on as-grown suspended single-walled carbon nanotubes (SWNTs) is not possible due to the inertness of ALD precursor molecules to the SWNT surface. Here, we present a functionalization technique that makes SWNTs reactive with ALD precursors, and deposit high-kappa oxides (Al2O3 and HfO2) onto the nanotubes to illustrate this method. Reactivity of the precursors with the functionalized nanotubes is due to - NO2 functional groups attached to the nanotube sidewalls. The effect of the functionalization on the nanotube conductance is shown to be reversible, and doping caused by the deposited oxides is discussed. (C) 2005 The Electrochemical Society.
引用
收藏
页码:G89 / G91
页数:3
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