3V low noise amplifier implemented using a 0.8 mu m CMOS process with three metal layers for 900MHz operation

被引：13

作者：

Ho, YC

Biyani, M

Colvin, J

Smithhisler, C

O, K

机构：

[1] University of Florida, Dept. of Elec. and Comp. Engineering, 316 Larsen Hall, Gainesville, FL 32611

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 13期

关键词：

CMOS integrated circuits; amplifiers;

D O I：

10.1049/el:19960821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3V CMOS low noise amplifier (LNA) was implemented in a 0.8 mu m CMOS process. This is the first CMOS amplifier which integrates input and output matching networks and integrated inductors formed using a conventional process. The LNA achieves a power gain of 14.3 dB and a noise figure of 4.5 dB, with a centre frequency of 820 MHz.

引用

页码：1191 / 1193

页数：3