Pulsed laser deposition of BaTiO3

被引：2

作者：

Sato, K

Takahashi, M

Matsunami, N

Takai, Y

机构：

[1] Department of Energy Engineering and Science, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1996年 / 9卷 / 4A期

关键词：

D O I：

10.1088/0953-2048/9/4A/040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the crystallinity of BaTiO3 (BTO) thin films on (100)MgO and (100)STO substrates and the YBa2Cu3O7-x (YBCO) buffer on MgO. An ArF excimer laser with a fluence 1.4 to 3.6 J cm(-2) per pulse was used of the preparation of BTO films at substrate temperatures in 500 to 800 degrees C and oxygen pressures of 10(-4) to 10(-6) Torr. BTO thin films with (001) orientation were grown on (100)Mg0 and (100)STO. The crystallinity of BTO on MgO depended on the substrate temperature. We have investigated the effect of oxidation on the BTO epitaxial growth. The crystal orientation of BTO on YBCO/MgO was the same as that of the YBCO.

引用

页码：A156 / A160

页数：5

共 3 条

[1] GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION [J].