Atomic-scale surface control and second-harmonic generation in GdxY1-xCa4O(BO3)3 thin films grown by combinatorial laser molecular-beam epitaxy

被引：4

作者：

Kim, TW

Arai, N

Koinuma, H

Matsumoto, Y

Yoshimura, M

Furuya, H

Nakao, H

Mori, Y

Sasaki, T

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr Lab, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

[3] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

[4] Japan Sci & Tecnol Corp, CREST, Tokyo, Japan

[5] Sci & Technol Agcy Japan, COMET, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 12期

关键词：

D O I：

10.1063/1.1402964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the atomic-scale, growth control and second-harmonic generation (SHG) properties of GdxY1-xCa4O(BO3)(3) thin films. Combinatorial laser molecular-beam epitaxy was employed to optimize the growth conditions of the film. Ultrasmooth GdxY1-xCa4O(BO3)(3) thin films with step-and-terrace structure were obtained by using atomically controlled GdCa4O(BO3)(3) substrates. The dependence of SHG intensity on the fundamental wave polarization angle was studied for the epitaxial film on (010) GdCa4O(BO3)(3) substrate in comparison for the randomly oriented film on (0001) sapphire substrate. It was found that only the epitaxially grown film clearly exhibited a fourfold SHG intensity showing type-II phase-matching direction. (C) 2001 American Institute Of Physics.

引用

页码：1783 / 1785

页数：3

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