GaN-based solar-ultraviolet detection instrument

被引：37

作者：

Monroy, E ^{[1
]}

Calle, F

Angulo, C

Vila, P

Sanz, A

Garrido, JA

Calleja, E

Munoz, E

Haffouz, S

Beaumont, B

Omnes, F

Gibart, P

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

[2] CNRS, F-06560 Valbonne, France

来源：

APPLIED OPTICS | 1998年 / 37卷 / 22期

关键词：

D O I：

10.1364/AO.37.005058

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the fabrication of a solar-UV monitoring system that uses GaN-based photodetectors. GaN photoconductors, p-n junction photodiodes, and Schottky barrier photodiodes have been fabricated and characterized as UV sensors. The best performances are obtained in Schottky photodiodes, which show a linear response, a fiat responsivity of 100 mA/W, a visible rejection ratio higher than 10(3), and a noise-equivalent power of 1 nW/Hz(-1/2). Preliminary data on AlxGa1-xN (x = 0.15, 0.22) detectors are also presented. Using GaN Schottky diodes, we fabricate and evaluate a complete solar-UV detection head. (C) 1998 Optical Society of America.

引用

页码：5058 / 5062

页数：5

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