Vapor-liquid-solid growth of silicon-germanium nanowires

被引：94

作者：

Lew, KK

Pan, L

Dickey, EC

Redwing, JM ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 24期

关键词：

D O I：

10.1002/adma.200306035

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

SiGe alloy nanowires (see Figure) have been fabricated using vapor-liquid-solid (VLS) growth with silane (SiH4) and germane (GeH4) gas sources. Growth conditions have been identified that produce nanowires with homogeneous alloy composition with negligible Ge coating on the wire surface. The Ge composition in the nanowire can be controlled by varying the inlet GeH4/(GeH4 + SiH4) gas ratio.

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页码：2073 / +

页数：5

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