Structural change-induced negative differential resistance in polythiophene

被引：20

作者：

Liu, X. J. ^{[1
]}

An, Z. ^{[1
]}

机构：

[1] Hebei Normal Univ, Coll Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050016, Peoples R China

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Negative differential resistance; Electron-lattice interaction; Polythiophene; Green's function; MAGNETORESISTANCE; POLY(THIOPHENE); HYSTERESIS; DEVICE;

D O I：

10.1016/j.orgel.2011.05.007

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

Based on the Su-Schrieffer-Heeger model and the nonequilibrium Green's function formalism, we have investigated charge transportation in a metal/polythiophene/metal structure. Results for the simulated conductivity include I-V curves that show an abrupt onset of negative differential resistance (NDR) with a peak-to-valley current ratio as high as 70. Combining these results with an analysis of the configuration of the molecular lattice and the reduced eigenvalues, it was found that the NDR mechanism was largely attributable to structural changes in the organic layer induced by the bias voltage. These results can help in understanding the electron-lattice coupling effect and the origin of NDR behavior in the I-V characteristics of organic molecular devices. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

引用

页码：1352 / 1357

页数：6

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