Control of emission characteristics of silicon field emitter arrays by an ion implantation technique

被引：35

作者：

Kanemaru, S ^{[1
]}

Hirano, T ^{[1
]}

Tanoue, H ^{[1
]}

Itoh, J ^{[1
]}

机构：

[1] KOBE STEEL LTD,NISHI KU,KOBE,HYOGO 65122,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conical Si field emitter arrays with gate electrodes have been fabricated. Emitter tips were doped by using an ion implantation technique so as to control the emission characteristics. The doped emitters with n-type surfaces showed typical held emission characteristics. However, the p-type emitters did not work well with the Fowler-Nordheim theory and showed plateaus in the Fowler-Nordheim plots. It is speculated from the capacitance-voltage measurements and the experiment of photoenhanced emission that the emission current is limited due to the supply of electrons from depletion layers near the emitter tips and from inversion layers under the gate electrodes. (C) 1996 American Vacuum Society.

引用

页码：1885 / 1888

页数：4

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