Electric-field-related reliability of AlGaAs/GaAs power HFETs: Bias dependence and correlation with breakdown

被引：44

作者：

Dieci, D

Sozzi, G

Menozzi, R

Tediosi, E

Lanzieri, C

Canali, C

机构：

[1] Univ Modena, Dipartimento Sci Ingn, I-41100 Modena, Italy

[2] Univ Modena, INFM, I-41100 Modena, Italy

[3] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy

[4] Alenia Marconi Syst, I-00131 Rome, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

关键词：

electric breakdown; FETs; Gallium compounds; hot carriers; microwave power FETs; reliability;

D O I：

10.1109/16.944179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the break-down voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested.

引用

页码：1929 / 1937

页数：9

共 27 条

[1] A review of hot-carrier degradation mechanisms in MOSFETs [J].

Acovic, A ;

LaRosa, G ;

Sun, YC .

MICROELECTRONICS AND RELIABILITY, 1996, 36 (7-8) :845-869

[2] A NEW DRAIN-CURRENT INJECTION TECHNIQUE FOR THE MEASUREMENT OF OFF-STATE BREAKDOWN VOLTAGE IN FETS [J].

BAHL, SR ;

DELALAMO, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) :1558-1560

[3] DEPENDENCE OF IONIZATION CURRENT ON GATE BIAS IN GAAS-MESFETS [J].

CANALI, C ;

NEVIANI, A ;

TEDESCO, C ;

ZANONI, E ;

CETRONIO, A ;

LANZIERI, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :498-501

[4]

CANALI C, 1995, 1995 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 33RD ANNUAL, P205, DOI 10.1109/RELPHY.1995.513676

[5]

CHRISTIANSON KA, 1994, P GAAS REL WORKSH

[6] Hot electron effects on Al0.25Ga0.75As/GaAs power HFET's under off-state and on-state electrical stress conditions [J].

Dieci, D ;

Menozzi, R ;

Lanzieri, C ;

Polenta, L ;

Canali, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :261-268

[7]

DIECI D, 2000, P INT REL PHYS S, P258

[8] A 100W S-Band AlGaAs/GaAs hetero-structure FET for base stations of wireless personal communications. [J].

Goto, S ;

Fujii, K ;

Morishige, H ;

Suzuki, S ;

Sakamoto, S ;

Yoshida, N ;

Tanino, N ;

Sato, K .

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, :77-80

[9]

HASANO A, 1998, P IEDM TECH DIG, P59

[10]

HASEGAWA H, 1993, IEEE MTT-S, P289, DOI 10.1109/MWSYM.1993.276821

← 1 2 3 →