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Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

被引：48
作者：
Buckley, J
De Salvo, B
Deleruyelle, D
Gely, M
Nicotra, G
Lombardo, S
Damlencourt, JF
Hollinger, P
Martin, F
Deleonibus, S
机构：
[1] CEA LETI, F-38054 Grenoble, France
[2] Univ Aix Marseille 1, IMT Technopole Chateau Gombert, L2MP, F-13451 Marseille, France
[3] CNR IMM, I-95121 Catania, Italy
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 80卷
关键词：
high-k; Al2O3; fixed charges;
D O I：
10.1016/j.mee.2005.04.070
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present an original study that shows how to reduce the negative fixed charges of atomic layer deposited Al2O3. The influence of the aluminium oxide growth temperature on this charge is studied here for the first time. The effect of annealing is also considered, and an optimal process is proposed. Relationship with H content is investigated as well. Finally, influences of these charges on the Al2O3 transport properties are analyzed.
引用
收藏
页码：210 / 213
页数：4
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