Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys

被引:84
作者
Mattila, T [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.369463
中图分类号
O59 [应用物理学];
学科分类号
摘要
Valence force field simulations utilizing large supercells are used to investigate the bond lengths in wurtzite and zinc-blende InxGa1-xN and AlxGa1-xN random alloys. We find that (i) while the first-neighbor cation-anion shell is split into two distinct values in both wurtzite and zinc-blende alloys (RGa-N1 not equal RIn-N1), the second-neighbor cation-anion bonds are equal (RGa-N2 = RIn-N2). The second-neighbor cation-anion bonds exhibit a crucial difference between wurtzite and zinc-blende binary structures: in wurtzite we find two bond distances which differ in length by 13% while in the zinc-blende structure there is only one bond length. This splitting is preserved in the alloy, and acts as a fingerprint, distinguishing the wurtzite from the zinc-blende structure. (iii) The small splitting of the first-neighbor cation-anion bonds in the wurtzite structure due to nonideal c/a ratio is preserved in the alloy, but is obscured by the bond length broadening. (iv) The cation-cation bond lengths exhibit three distinct values in the alloy (Ga-Ga, Ga-In, and In-In), while the anion-anion bonds are split into two values corresponding to N-Ga-N and N-In-N. (v) The cation-related splitting of the bonds and alloy broadening are considerably larger in InGaN alloy than in AlGaN alloy due to larger mismatch between the binary compounds. (vi) The calculated first-neighbor cation-anion and cation-cation bond lengths in InxGa1-xN alloy are in good agreement with the available experimental data. The remaining bond lengths are provided as predictions. In particular, the predicted splitting for the second-neighbor cation-anion bonds in the wurtzite structure awaits experimental testing. (C) 1999 American Institute of Physics. [S0021-8979(99)09601-2].
引用
收藏
页码:160 / 167
页数:8
相关论文
共 22 条
[1]   LOCAL-STRUCTURE OF TERNARY SEMICONDUCTING RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF CD1-XMNXTE [J].
BALZAROTTI, A ;
CZYZYK, M ;
KISIEL, A ;
MOTTA, N ;
PODGORNY, M ;
ZIMNALSTARNAWSKA, M .
PHYSICAL REVIEW B, 1984, 30 (04) :2295-2298
[2]   MODEL OF THE LOCAL-STRUCTURE OF RANDOM TERNARY ALLOYS - EXPERIMENT VERSUS THEORY [J].
BALZAROTTI, A ;
MOTTA, M ;
KISIEL, A ;
ZIMNALSTARNAWSKA, M ;
CZYZYK, MT ;
PODGORNY, M .
PHYSICAL REVIEW B, 1985, 31 (12) :7526-7539
[3]   Bond-length distribution in tetrahedral versus octahedral semiconductor alloys: The case of Ga1-xInxN [J].
Bellaiche, L ;
Wei, SH ;
Zunger, A .
PHYSICAL REVIEW B, 1997, 56 (21) :13872-13877
[4]   LOCAL-STRUCTURE OF IONIC SOLID-SOLUTIONS - EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY [J].
BOYCE, JB ;
MIKKELSEN, JC .
PHYSICAL REVIEW B, 1985, 31 (10) :6903-6905
[5]   LENGTH MISMATCH IN RANDOM SEMICONDUCTOR ALLOYS .2. STRUCTURAL CHARACTERIZATION OF PSEUDOBINARIES [J].
CAI, Y ;
THORPE, MF .
PHYSICAL REVIEW B, 1992, 46 (24) :15879-15886
[6]   VIOLATION OF VEGARDS LAW IN COVALENT SEMICONDUCTOR ALLOYS [J].
FONG, CY ;
WEBER, W ;
PHILLIPS, JC .
PHYSICAL REVIEW B, 1976, 14 (12) :5387-5391
[7]  
JEFFS NJ, 1998, P MRS MARCH M SAN FR
[8]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&
[9]   Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN [J].
Kim, K ;
Lambrecht, WRL ;
Segall, B .
PHYSICAL REVIEW B, 1996, 53 (24) :16310-16326
[10]   ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].
MARTIN, RM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+