Chemical deposition of ZnSe thin films: Photoelectrochemical applications

被引：34

作者：

Hankare, P. P. ^{[1
]}

Chate, P. A. ^{[2
]}

Chavan, P. A. ^{[1
]}

Sathe, D. J. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Chem, Solid State Res Lab, Kolhapur 416004, Maharashtra, India

[2] JSM Coll, Dept Chem, Alibag 402201, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 461卷 / 1-2期

关键词：

chemical bath deposition; power output; photo response; flat band potential; spectral response;

D O I：

10.1016/j.jallcom.2007.07.071

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zinc selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-ZnSe vertical bar NaOH (1M) + S (1M) + Na2S (1M)vertical bar C-(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that ZnSe thin films are n-type conductivity. The junction ideality factor was found to be 3.85. The flat band potential is found to be -0.530 V. The barrier height value was found to be 0. 171 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency was found to be 153 mV, 20 mu A, 29.41% and 0. 13%, respectively. Photoresponse shows lighted ideality factor is 6.78. Spectral response shows the maximum current observed at 440 nm. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：623 / 627

页数：5

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