Low temperature growth of epitaxial La0.5Sr0.5CoO3 films on (100)SrTiO3 by pulsed laser deposition

被引：19

作者：

Wong, KH ^{[1
]}

Wu, WB

Chan, PW

Cheung, JT

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong

[2] Hong Kong Polytech Univ, Ctr Mat Res, Kowloon, Hong Kong

[3] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA

[4] Univ Sci & Technol China, Struct Res Lab, Acad Sinica, Hefei 230026, Peoples R China

来源：

THIN SOLID FILMS | 1998年 / 312卷 / 1-2期

关键词：

low temperature; epitaxial; pulsed laser deposition;

D O I：

10.1016/S0040-6090(97)00224-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Perovskite conductive La0.5Sr0.5CoO3 (LSCO) thin films were grown in situ on (100)SrTiO3 by pulsed laser deposition at 400, 450 and 500 degrees C. Heterostructures of Pb(Zr0.54Ti0.46)O-3/LSCO and YBa2Cu3O7-x/LSCO were also prepared in situ on the same substrates, where the LSCO layers were deposited at 500 degrees C. All the films were characterized structurally by X-ray diffraction in both Bragg-Brentano and four-circle geometry. A cube-on-cube growth of the bilayers as well as the LSCO film grown at 500 degrees C confirmed that LSCO can be grown epitaxially on the lattice-matched single crystal substrate at a temperature as low as 500 degrees C, which is well compatible with existing Si process technology. (C) 1998 Elsevier Science S.A.

引用

页码：7 / 10

页数：4

共 18 条

[1] Low temperature processing of Nb-doped Pb(Zr,Ti)O-3 capacitors with La0.5Sr0.5CoO3 electrodes [J].

AlShareef, HN ;

Tuttle, BA ;

Warren, WL ;

Dimos, D ;

Raymond, MV ;

Rodriguez, MA .

APPLIED PHYSICS LETTERS, 1996, 68 (02) :272-274

[2] A CLASS OF COBALT OXIDE MAGNETORESISTANCE MATERIALS DISCOVERED WITH COMBINATORIAL SYNTHESIS [J].

BRICENO, G ;

CHANG, HY ;

SUN, XD ;

SCHULTZ, PG ;

XIANG, XD .

SCIENCE, 1995, 270 (5234) :273-275

[3] ELECTRON-SPECTROSCOPY STUDY OF THE SEMICONDUCTOR-METAL TRANSITION IN LA1-XSRXCOO3 [J].

CHAINANI, A ;

MATHEW, M ;

SARMA, DD .

PHYSICAL REVIEW B, 1992, 46 (16) :9976-9983

[4]

Cheung J. T., 1993, Integrated Ferroelectrics, V3, P147, DOI 10.1080/10584589308216709

[5] STRUCTURAL AND ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 EPITAXIAL-FILMS [J].

CHEUNG, JT ;

MORGAN, PED ;

LOWNDES, DH ;

ZHENG, XY ;

BREEN, J .

APPLIED PHYSICS LETTERS, 1993, 62 (17) :2045-2047

[6] POLYCRYSTALLINE LA0.5SR0.5COO3 PBZR0.53TI0.47O3 LA0.5SR0.5COO3 FERROELECTRIC CAPACITORS ON PLATINIZED SILICON WITH NO POLARIZATION FATIGUE [J].

DAT, R ;

LICHTENWALNER, DJ ;

AUCIELLO, O ;

KINGON, AI .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2673-2675

[7]

Dhote AM, 1996, APPL PHYS LETT, V68, P1350, DOI 10.1063/1.115931

[8] MICROSTRUCTURE OF EPITAXIAL LA0.5SR0.5COO3/FERROELECTRIC PB0.9LA0.1(ZR0.2TI0.8)0.975O3/LA0.5SR0.5COO3 HETEROSTRUCTURES ON LAALO3 [J].

GHONGE, SG ;

GOO, E ;

RAMESH, R ;

SANDS, T ;

KERAMIDAS, VG .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1628-1630

[9] Magnetoresistance in La1-xSrxCoO3 for 0.05<=x<=0.25 [J].

Golovanov, V ;

Mihaly, L ;

Moodenbaugh, AR .

PHYSICAL REVIEW B, 1996, 53 (13) :8207-8210

[10] LEAKAGE CURRENT BEHAVIORS OF EPITAXIAL AND PREFERENTIALLY ORIENTED BI4TI3O12 THIN-FILMS GROWN ON LA0.5SR0.5COO3 BOTTOM ELECTRODES [J].

JO, W ;

KIM, KH ;

NOH, TW .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3120-3122

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