Electrical conductivity enhancement in nanocrystalline (RE2O3)0.08(ZrO2)0.92 (RE=Sc, Y) thin films

被引：65

作者：

Zhang, YW

Jin, S

Yang, Y

Li, GB

Tian, SJ

Jia, JT

Liao, CS

Yan, CH ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China

[2] Peking Univ, PKU HKU joint Lab Rare Earth Mat & Bioinorgan Che, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1328099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dense, crack-free, uniform, and homogeneous (RE2O3)(0.08)(ZrO2)(0.92) (RE=Sc, Y) nanocrystalline thin films were fabricated by a simple sol-gel method and characterized by impedance studies. At temperatures beyond 600 degreesC, the electrical conductivity of (Sc2O3)(0.08)(ZrO2)(0.92) and (Y2O3)(0.08)(ZrO2)(0.92) nanocrystals in pure cubic phase was ten times higher than that of the corresponding bulk materials. The decrease of grain boundary resistance related to interfacial effect is predominately responsible for the electrical conductivity enhancement. (C) 2000 American Institute of Physics. [S0003-6951(00)05247-5].

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页码：3409 / 3411

页数：3

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