Deposition of tin sulfide thin films from tin(IV) thiolate precursors

被引：68

作者：

Barone, G

Hibbert, TG

Mahon, MF

Molloy, KC

Price, LS

Parkin, IP

Hardy, AME

Field, MN

机构：

[1] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England

[2] UCL, Dept Chem, London WC1H 0AJ, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2001年 / 11卷 / 02期

关键词：

D O I：

10.1039/b005888m

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

引用

页码：464 / 468

页数：5

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