Diode-pumped ytterbium-doped Sr-5(PO4)(3)F laser performance

被引：53

作者：

Marshall, CD ^{[1
]}

Smith, LK ^{[1
]}

Beach, RJ ^{[1
]}

Emanuel, MA ^{[1
]}

Schaffers, KI ^{[1
]}

Skidmore, J ^{[1
]}

Payne, SA ^{[1
]}

Chai, BHT ^{[1
]}

机构：

[1] UNIV CENT FLORIDA,CTR RES EDUC OPT & LASERS,ORLANDO,FL 32826

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 04期

关键词：

D O I：

10.1109/3.488839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of the first diode-pumped Yb3+-doped Sr-5(PO4)(3)F (Yb:S-FAP) solid-state laser is discussed. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 38 mm Yb:S-FAP rod, The saturation fluence for diode pumping was deduced to be 5.5 J/cm(2) for the particular 2.8 kW peak power diode array utilized in our studies, This is 2,5x higher than the intrinsic 2.2 J/cm(2) saturation fluence as is attributed to the 6.5 nm bandwidth of our diode pump array, The small signal gain is consistent with the previously measured emission cross section of 6.0 x 10(-20) cm(2), obtained from a narrowband-laser pumped gain experiment, Up to 1.7 J/cm(3) of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod, In a free running configuration, diode-pumped slope efficiencies up to 43% (laser output energy/absorbed pump energy) were observed with output energies up to similar to 0.5 J per 1 ms pulse, When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 mu s pulses.

引用

页码：650 / 656

页数：7

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