Single-Crystalline Cu4Bi4S9 Nanoribbons: Facile Synthesis, Growth Mechanism, and Surface Photovoltaic Properties

被引：54

作者：

Li, Hongxing ^{[1
,2
]}

Zhang, Qinglin ^{[1
]}

Pan, Anlian ^{[1
]}

Wang, Yanguo ^{[1
,3
]}

Zou, Bingsuo ^{[1
]}

Fan, Hong Jin ^{[2
]}

机构：

[1] Hunan Univ, Coll Phys & Microelect Sci, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China

[2] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

[3] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2011年 / 23卷 / 05期

基金：

中国国家自然科学基金;

关键词：

chalcogenide; Cu4Bi4S9; nanobelts; solvothermal; surface photovoltage; photovoltaics; CU3BIS3; THIN-FILMS; SOLAR-CELLS; SILICON NANOWIRES; ABSORBER; NANORODS; ROUTE; NANOCRYSTALS; SPECTROSCOPY; METAL;

D O I：

10.1021/cm103340v

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu-based ternary chalcogenides have received great interest as low-cost alternatives to conventional photovoltaic materials.. In this work, a large quantity of single-crystalline, orthorhombic phase Cu4Bi4S9 nanoribbons are fabricated using a facile solvothermal method. The growth of the Cu4Bi4S9 nanoribbons is revealed to be a layer-by-layer stacking of Cu4Bi4S9 thin slabs via dodecylamine (DDA) linker, in which the number of stacking layers, and, subsequently, the width-to-thickness ratio, depends on the DDA concentration. Optical investigations show that the as-prepared Cu4Bi4S9 nanoribbons have a narrow bandgap of E-g = 1.14 eV and enhanced surface photovoltage response in the entire visible wavelength range. It is indicated that these Cu4Bi4S9 nanoribbons have potential application in photodetectors, solar cells, or other optoelectronic devices.

引用

页码：1299 / 1305

页数：7

共 43 条

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