First-principles study of the structural phase transformation of hafnia under pressure

被引:184
作者
Kang, J [1 ]
Lee, EC [1 ]
Chang, KJ [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
关键词
D O I
10.1103/PhysRevB.68.054106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the phase transformation of HfO2 under hydrostatic pressure through first-principles pseudopotential calculations within the local-density-functional approximation (LDA) and the generalized gradient approximation (GGA). We find that with increasing of pressure, HfO2 undergoes a series of structural transformations from monoclinic to orthorhombic I and then to orthorhombic II, consistent with experiments. The calculated transition pressures within the GGA are in good agreement with the measured values, while they are severely underestimated by the LDA. Analyzing the distribution of electron densities for the high-pressure phases, we find that the electron densities of the orthorhombic-II phase are more homogeneous than for the orthorhombic-I phase. Due to this distinct difference in the homogeneity of electron densities, the energy difference between the orthorhombic-I and orthorhombic-II phases is enhanced in the GGA; thus, the transition pressure between the two phases increases significantly.
引用
收藏
页数:8
相关论文
共 25 条
[1]   X-RAY-DIFFRACTION STUDY OF HAFNIA UNDER HIGH-PRESSURE USING SYNCHROTRON RADIATION [J].
ADAMS, DM ;
LEONARD, S ;
RUSSELL, DR ;
CERNIK, RJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1991, 52 (09) :1181-1186
[2]  
BALOG M, 1977, THIN SOLID FILMS, V41, P247, DOI 10.1016/0040-6090(77)90312-1
[3]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[4]   High-density ZrO2 and HfO2:: Crystalline structures and equations of state [J].
Desgreniers, S ;
Lagarec, K .
PHYSICAL REVIEW B, 1999, 59 (13) :8467-8472
[5]   Vacancy and interstitial defects in hafnia [J].
Foster, AS ;
Gejo, FL ;
Shluger, AL ;
Nieminen, RM .
PHYSICAL REVIEW B, 2002, 65 (17) :1741171-17411713
[6]   Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 [J].
Gutowski, M ;
Jaffe, JE ;
Liu, CL ;
Stoker, M ;
Hegde, RI ;
Rai, RS ;
Tobin, PJ .
APPLIED PHYSICS LETTERS, 2002, 80 (11) :1897-1899
[7]   Generalized gradient theory for silica phase transitions [J].
Hamann, DR .
PHYSICAL REVIEW LETTERS, 1996, 76 (04) :660-663
[8]   PRESSURE-INDUCED PHASE-TRANSFORMATIONS IN HFO2 TO 50 GPA STUDIED BY RAMAN-SPECTROSCOPY [J].
JAYARAMAN, A ;
WANG, SY ;
SHARMA, SK ;
MING, LC .
PHYSICAL REVIEW B, 1993, 48 (13) :9205-9211
[9]   EFFICACIOUS FORM FOR MODEL PSEUDOPOTENTIALS [J].
KLEINMAN, L ;
BYLANDER, DM .
PHYSICAL REVIEW LETTERS, 1982, 48 (20) :1425-1428
[10]   Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing [J].
Lee, BH ;
Kang, LG ;
Nieh, R ;
Qi, WJ ;
Lee, JC .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1926-1928