Photoconductive gain modelling of GaN photoconductors

被引：166

作者：

Garrido, JA ^{[1
]}

Monroy, E ^{[1
]}

Izpura, I ^{[1
]}

Munoz, E ^{[1
]}

机构：

[1] UPM, ETSI Telecomunicac, Dept Ingn Elect, Madrid 28040, Spain

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 06期

关键词：

D O I：

10.1088/0268-1242/13/6/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model to explain the behaviour of GaN photoconductive detectors is proposed, and it is based on the idea of a volume modulation rather than a carrier density modulation. Space charge regions inside the semiconductor produce a variation of the conductive volume when carriers are photogenerated. The strong non-exponential photocurrent decays result from carrier capture processes over the barriers associated with space charge regions. By means of computer simulation, this model explains quite well the behaviour of current GaN photoconductor devices and predicts their time response, temperature dependence and responsivity properties.

引用

页码：563 / 568

页数：6

共 14 条

[1] SURFACE PHOTOVOLTAGES DUE TO PULSED SOURCES - IMPLICATIONS FOR PHOTOEMISSION SPECTROSCOPY
ALDAO, CM
VALTUENA, JF
IZPURA, I
MUNOZ, E
[J]. PHYSICAL REVIEW B, 1994, 50 (23): : 17729 - 17731
[2] High quality GaN grown by MOVPE
Beaumont, B
Vaille, M
Boufaden, T
elJani, B
Gibart, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 316 - 320
[3] Mechanisms of recombination in GaN photodetectors
Binet, F
Duboz, JY
Rosencher, E
Scholz, F
Harle, V
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1202 - 1204
[4] GOLDENBERG B, 1995, TOPICAL WORKSHOP 3 5
[5] Surface band-bending assessment by photocurrent techniques. Application to III-V semiconductors
Izpura, I
Valtuena, JF
Munoz, E
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (06) : 678 - 686
[6] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS
KHAN, MA
KUZNIA, JN
OLSON, DT
VANHOVE, JM
BLASINGAME, M
REITZ, LF
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2917 - 2919
[7] Kinetics of photoconductivity in n-type GaN photodetector
Kung, P
Zhang, X
Walker, D
Saxler, A
Piotrowski, J
Rogalski, A
Razeghi, M
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3792 - 3794
[8] Photoconductor gain mechanisms in GaN ultraviolet detectors
Munoz, E
Monroy, E
Garrido, JA
Izpura, I
Sanchez, FJ
SanchezGarcia, MA
Calleja, E
Beaumont, B
Gibart, P
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (07) : 870 - 872
[9] Photocurrent decay in n-type GaN thin films
Qiu, CH
Melton, W
Leksono, MW
Pankove, JI
Keller, BP
DenBaars, SP
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1282 - 1284
[10] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS
QUEISSER, HJ
THEODOROU, DE
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (05) : 401 - 404

← 1 2 →