Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-do-Feci or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission. (C) 1998 American Institute of Physics.