Metal-insulator-semiconductor transmission lines

被引：45

作者：

Williams, DF ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80303 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 02期

关键词：

equivalent circuit; metal-insulator-semiconductor transmission line; microstrip; silicon;

D O I：

10.1109/22.744292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.

引用

页码：176 / 181

页数：6

共 10 条

[1] TRANSMISSION-LINE MODELS FOR LOSSY WAVE-GUIDE INTERCONNECTIONS IN VLSI [J].