Using polypyrrole as the contrast pH detector to fabricate a whole solid-state pH sensing device

被引:33
作者
Pan, CW [1 ]
Chou, JC
Kao, IK
Sun, TP
Hsiung, SK
机构
[1] Chung Yuan Christian Univ, Inst Elect Engn, Chungli 320, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu, Yunlin, Taiwan
[3] Chung Yuan Christian Univ, Inst Biomed Engn, Chungli 320, Taiwan
[4] Natl Chi Nan Univ, Inst Elect Engn, Nantou 545, Taiwan
关键词
fabrication; ITO glass; pH; SnO2; solid-state;
D O I
10.1109/JSEN.2002.807300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we use the extended gate field effect transistor (EGFET) and the coated wire electrode (CWE) to design a differential pH-sensing device. The SnO2/ITO glass structure is the EGFET used as the pH sensor because of its excellent pH sensitivity of about 57.10 mV/pH. The contrast pH sensor is the polypyrrole/SnO2/ITO glass structure CWE, which has the lower pH sensitivity of about 27.81 mV/pH, and we use the third SnO2/ITO glass structure as the reference electrode to serve the base potential of the electrolyte solution. The pH sensitivity of this differential pH-sensing device is about 30.14 mV/pH and it is linear. Hence, this device is a good pH sensor. By using this technology, the differential pH-sensing device has a lot of advantages, such as simple fabrication, solid-state electrodes, easy packaging, low cost, etc.
引用
收藏
页码:164 / 170
页数:7
相关论文
共 27 条
[1]   ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE-DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFETS) [J].
BARABASH, PR ;
COBBOLD, RSC ;
WLODARSKI, WB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1271-1282
[2]  
BERGVELD P, 1988, ANAL BIOMEDICAL APPL, P58
[3]   A PROCESS FOR THE COMBINED FABRICATION OF ION SENSORS AND CMOS CIRCUITS [J].
BOUSSE, L ;
SHOTT, J ;
MEINDL, JD .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :44-46
[4]   A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process [J].
Chin, YL ;
Chou, JC ;
Sun, TP ;
Liao, HK ;
Chung, WY ;
Hsiung, SK .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 75 (1-2) :36-42
[5]   A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process [J].
Chin, YL ;
Chou, JC ;
Sun, TP ;
Chung, WY ;
Hsiung, SK .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 76 (1-3) :582-593
[6]   Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology [J].
Chin, YL ;
Chou, JC ;
Lei, ZC ;
Sun, TP ;
Chung, WY ;
Hsiung, SK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (11) :6311-6315
[7]   Simulation of Ta2O5-gate ISFET temperature characteristics [J].
Chou, JC ;
Li, YS ;
Chiang, JL .
SENSORS AND ACTUATORS B-CHEMICAL, 2000, 71 (1-2) :73-76
[8]   CONDUCTIVITY AND STABILITY OF POLYPYRROLE FILM ELECTROSYNTHESIZED ON A PBO2/SNO2/TI SUBSTRATE [J].
HWANG, BJ ;
LEE, KL .
THIN SOLID FILMS, 1995, 254 (1-2) :23-27
[9]   ELECTROCHEMISTRY OF CHEMICALLY SENSITIVE FIELD-EFFECT TRANSISTORS [J].
JANATA, J .
SENSORS AND ACTUATORS, 1983, 4 (02) :255-265
[10]  
KELLY RG, 1985, P IEEE COMM SPEECH V, V132, P428