Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals

被引：30

作者：

Ohgaki, Takeshi ^{[1
]}

Ohashi, Naoki ^{[1
]}

Sugimura, Shigeaki ^{[1
]}

Ryoken, Haruki ^{[1
]}

Sakaguchi, Isao ^{[1
]}

Adachi, Yutaka ^{[1
]}

Haneda, Hajime ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 09期

关键词：

D O I：

10.1557/JMR.2008.0300

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n-type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n-type ZnO thin film and successfully reproduced a false positive Hall coefficient from n-type ZnO.

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页码：2293 / 2295

页数：3

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