Current density enhancement at active layer edges in polycrystalline silicon thin-film transistors

被引：11

作者：

Kimura, M ^{[1
]}

Nozawa, R ^{[1
]}

Inoue, S ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seiko Epson Corp, Base Technol Res Ctr, Nagano 3990293, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 1AB期

关键词：

polycrystalline silicon; thin-film transistor; active layer edge; electric field concentration; carrier density increase; current density enhancement; 2-D device simulation;

D O I：

10.1143/JJAP.40.L26

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In polycrystalline silicon thin-film transistors, the electric field is concentrated- the carrier density is increased, and the current density is enhanced at active laver edges. This phenomenon is confirmed using the two-dimensional (2-D) device simulation. Because of this phenomenon, the on-current is not proportional to the gate width. This dependence of the on-current on the gate width is confirmed using the 2-D device simulation and experiment.

引用

页码：L26 / L28

页数：3

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