Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

被引：2

作者：

Brauer, G. ^{[1
]}

Anwand, W. ^{[1
]}

Skorupa, W. ^{[1
]}

Kuriplach, J. ^{[2
]}

Melikhova, O. ^{[2
]}

Cizek, J. ^{[2
]}

Prochazka, I. ^{[2
]}

von Wenckstern, H. ^{[3
]}

Brandt, M. ^{[3
]}

Lorenz, M. ^{[3
]}

Grundmann, M. ^{[3
]}

机构：

[1] Forschungszentrum Rossendorf, Inst Ionenstrahlphys & Mat Forsch, Postfach 510119, D-01314 Dresden, Germany

[2] Charles Univ Prague, Fac Math & Phys, Dept Low Temp Phys, Prague 18000, Czech Republic

[3] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10 | 2007年 / 4卷 / 10期

关键词：

D O I：

10.1002/pssc.200675731

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm(3), grown by a hydrothermal approach, have been implanted by 40 keV N+ ions to a fluence of 1 x 10(15) cm(-2) at room temperature. Their properties revealed by positron annihilation and Hall effect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 degrees C and 500 degrees C. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3642 / +

页数：2

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