Thin film mechanically controllable break junctions

被引:16
作者
Keijsers, RJP [1 ]
Shklyarevskii, OI [1 ]
Hermsen, JGH [1 ]
vanKempen, H [1 ]
机构
[1] NATL ACAD SCI,B VERKIN INST LOW TEMP PHYS & ENGN,UA-310164 KHARKOV,UKRAINE
关键词
D O I
10.1063/1.1147089
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An adaptation of the mechanically controllable break junction technique using thin metallic films to create point contacts and tunnel junctions is presented. The junctions that are created using this very simple method are extremely stable, and can easily be adjusted from rather large point contacts (R approximate to 0.1 Omega) to high-resistance (10(10) Omega) tunnel junctions. The electrodes can be kept very clean by breaking the sample in ultrahigh vacuum or in a very pure helium atmosphere at 1-4 K. Point-contact spectra of good quality were measured for contacts of 0.1-500 Omega. For very small contacts, the expected steplike increase of junction resistance with decreasing contact size was observed, with a jump to tunneling behavior occurring at resistances of 12-14 k Omega. (C) 1996 American Institute of Physics.
引用
收藏
页码:2863 / 2866
页数:4
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