A 1-157 GHz InP HEMT traveling-wave amplifier

被引：10

作者：

Agarwal, B ^{[1
]}

Schmitz, AE ^{[1
]}

Brown, JJ ^{[1
]}

Le, M ^{[1
]}

Lui, M ^{[1
]}

Rodwell, MJW ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/RFIC.1998.682039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

We report traveling wave amplifiers with 1-157 GHz 3-dB bandwidth, 5 dB gain. These amplifiers were fabricated in a 0.1 mu m gate length InGaAs/InAlAs HEMT MMIC technology. The use of gate-line capacitive-division and low-loss elevated coplanar waveguide lines have yielded record bandwidth broadband amplifiers.

引用

页码：21 / 23

页数：3