GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

被引：1345

作者：

Kondow, M ^{[1
]}

Uomi, K ^{[1
]}

Niwa, A ^{[1
]}

Kitatani, T ^{[1
]}

Watahiki, S ^{[1
]}

Yazawa, Y ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

GaInNAs; GaAs substrate; long-wavelength-range laser diode; ideal band lineup; high-temperature performance;

D O I：

10.1143/JJAP.35.1273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T-0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

引用

页码：1273 / 1275

页数：3

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