Indium contamination from the indium-tin-oxide electrode in polymer light-emitting diodes

被引：224

作者：

Schlatmann, AR ^{[1
]}

Floet, DW ^{[1
]}

Hilberer, A ^{[1
]}

Garten, F ^{[1
]}

Smulders, PJM ^{[1
]}

Klapwijk, TM ^{[1
]}

Hadziioannou, G ^{[1
]}

机构：

[1] UNIV GRONINGEN,CTR MAT SCI,POLYMER CHEM LAB,NL-9747 AG GRONINGEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.117478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found that polymer light-emitting diodes (LEDs) contain high concentrations of metal impurities prior to operation. Narrow peaks in the electroluminescence spectrum unambiguously demonstrate the presence of atomic indium and aluminum. Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS) depth profiling data corroborate this result. An average indium concentration of 5 x 10(19)atoms/cm(3) originating from the indium-tin-oxide (ITO) electrode has been found in the polymer layer. (C) 1996 American Institute of Physics.

引用

页码：1764 / 1766

页数：3

共 18 条

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