Atomistic simulation of point defects end diffusion in B2 NiAl

被引：42

作者：

Mishin, Y ^{[1
]}

Farkas, D ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA

来源：

SCRIPTA MATERIALIA | 1998年 / 39卷 / 4-5期

关键词：

D O I：

10.1016/S1359-6462(98)00206-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

[No abstract available]

引用

页码：625 / 630

页数：6

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