Ultrabroadband terahertz radiation from low-temperature-grown GaAs photoconductive emitters

被引：181

作者：

Shen, YC

Upadhya, PC

Linfield, EH

Beere, HE

Davies, AG

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1619223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Terahertz radiation was generated with a biased and asymmetrically excited low-temperature-grown GaAs photoconductive emitter, and characterized with a 20-mum-thick ZnTe crystal using free-space electro-optic sampling. Using a backward collection scheme, we obtained terahertz radiation with frequency components over 30 THz, the highest ever observed for photoconductive emitters. We present spectra over the whole frequency range between 0.3 and 20 THz, demonstrating the use of this source for ultrabroadband THz spectroscopy. (C) 2003 American Institute of Physics.

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页码：3117 / 3119

页数：3

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