Control of the metal-semiconductor phase transition in a vanadium dioxide film with the aid of a fast-acting thermoelectric cooler. III

被引：8

作者：

Gal'perin, VL ^{[1
]}

Khakhaev, IA ^{[1
]}

Chudnovskii, FA ^{[1
]}

Shadrin, EB ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS | 1998年 / 43卷 / 02期

关键词：

Dioxide; Phase Transition; Vanadium; Temperature Difference; Dioxide Film;

D O I：

10.1134/1.1258973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The pulsed-cooling dynamics of fast-acting thermoelectric coolers is analyzed. Good agreement is obtained between the theory and the experimental results on information erasure with an interference vanadium dioxide structure in the single-pulse and repetitive-pulse modes. It is shown that the actually achievable overwrite frequency with thermoelectric erasure of information is about 30 Hz, and a fast-acting thermoelectric cooler is capable of providing a temperature difference of at least 10 OC between the cold and hot junctions under such conditions. (C) 1998 American Institute of Physics. [S1063-7842(98)01902-3].

引用

页码：235 / 240

页数：6